| 摘要 |
PURPOSE: A multiple junction solar battery and a manufacturing method thereof are provided to prevent a reversed phase interface defect which is generated in the solar battery interlayer interface. CONSTITUTION: A first substrate is prepared(S10). A InGaP layer and a GaAs layer are grown up in the first substrate in order(S20). A Ge layer is grown up in the GaAs layer by a chemistry meteorology deposition method using a IBuGe(IsoButylGermane)(S30). A BSF(Back Surface Field) layer for preventing the recombination of a carrier which is created in a multiple junction solar battery is formed on the Ge layer. A second substrate is formed on the Ge layer(S40). The first substrate is eliminated and is ohmic-connected(S50). |
