MASK MATERIAL COMPOSITION, METHOD FOR FORMING IMPURITY DIFFUSION LAYER, AND SOLAR BATTERY

摘要

PROBLEM TO BE SOLVED: To provide a mask material composition which can be suitably adopted for a mask formed for protection against the diffusion of an impurity diffusion component when diffusing the impurity diffusion component into a semiconductor substrate.

SOLUTION: The mask material composition is used for protection against the diffusion of an impurity diffusion component into a semiconductor substrate. The mask material composition comprises: a siloxane resin (A1) including a constitutional unit (a1) represented by the general formula (a1); a surfactant (B) having a dimethylsiloxane constitutional unit (b1) and an alkylene oxide constitutional unit (b2); and a solvent (C). In the general formula (a1), R1is a single bond or an alkylene group having 1-5 carbon atoms, and R2is an aryl group having 6-20 carbon atoms.

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