| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element which can improve a passivation effect on a semiconductor substrate. <P>SOLUTION: A photoelectric conversion element 100 comprises: an n-type single crystal silicon substrate 1; an oxide film 2; n-type amorphous films 3, 21-2m-1; an anti-reflection film 4; p-type amorphous films 11-1m; and electrodes 31-3m, 41-4m. The oxide films 2, the n-type amorphous film 3 and the anti-reflection film 4 are sequentially laminated on a surface of the n-type single crystal silicon substrate 1 on a light incident side. The p-type amorphous films 11-1m and the n-type amorphous films 21-2m-1 contact a rear face of the n-type single crystal silicon substrate 1 and alternately arranged in an in-plane direction of the n-type single crystal silicon substrate 1 one by one. The electrodes 31-3m are arranged in contact with the p-type amorphous films 11-1m, respectively and the electrodes 41-4m-1 are arranged in contact with the n-type amorphous films 21-2m-1, respectively. <P>COPYRIGHT: (C)2013,JPO&INPIT |
