| 发明名称 |
METHOD FOR GROWING Ga2O3-BASED SINGLE CRYSTAL, AND METHOD FOR PRODUCING Ga2O3-BASED SUBSTRATE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for growing a Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-based single crystal with high raw material efficiency in processing, and to provide a method for producing a Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-based substrate. <P>SOLUTION: The method for growing a Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-based single crystal includes: a process for bringing a seed crystal 20 into contact with a Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-based melt 12 overflowing from slits of a die 14; and a process for growing the plate-like Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-based single crystal 25 by pulling up the seed crystal 20. The die 14 has such a shape that the cross section perpendicular to the longitudinal direction of the slits has a V-shaped recess at its upper part, and the open angle of the V shape of the recess is ≥150° and <180°. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013124216(A) |
申请公布日期 |
2013.06.24 |
| 申请号 |
JP20110275878 |
申请日期 |
2011.12.16 |
| 申请人 |
TAMURA SEISAKUSHO CO LTD;KOHA CO LTD |
发明人 |
KOSHI KIMIYOSHI;UJIIE TAKEKAZU |
| 分类号 |
C30B29/16;C30B15/34 |
主分类号 |
C30B29/16 |
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