| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the bonding strength between a semiconductor element and a substrate. <P>SOLUTION: In a semiconductor device in which a first silver layer 530 formed on a surface of a substrate 500 and a second silver layer 140 formed on a surface of a semiconductor element 100 are bonded, a first ground layer 520 is disposed between the substrate and the first silver layer, a second ground layer 150 is disposed between the semiconductor element and the second silver layer, the first ground layer and the second ground layer are independently formed from a metal selected from a group composed of titanium, platinum, or gold, and at least one abnormal growth particle exists at the interface between the first silver layer and the second silver layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
