| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transistor with a hot carrier restrained, and a manufacturing method thereof. <P>SOLUTION: A transistor in one embodiment of the present invention comprises: a source region 112; a drain region 113; plural trenches T11-T13 extending in a channel longitudinal direction and parallely arranged in a channel width direction between the source region 112 and the drain region 113; and a gate electrode 122 formed to cover the plural trenches T11-T13 between the source region 112 and the drain region 113. The first trench T12 included in the plural trenches has a corner bent in the channel width direction. <P>COPYRIGHT: (C)2013,JPO&INPIT |
