| 摘要 |
<p>A solar cell which is comprising a p + n + junction composed of a pn junction capable of generating photovoltaic power on a p-type silicon monocrystal and an n + diffusion layer and a p+ diffusion layer in which impurities are doped in a high concentration on a portion of the pn junction, has reverse conductivity properties for current flow through a p + n + junction when a solar cell is biased in the reverse direction. In addition to preventing heat generation and deterioration of a solar cell when any of the solar cells enter shade, without connecting an external bypass diode, when a solar cell module is manufactured using a plurality of solar cells, a reduction in power generation efficiency in the entire solar cell module can also be prevented.</p> |
