发明名称 |
Extended drain P-channel metal-oxide-semiconductor transistor manufacturing method for voltage regulation device of mobile phone, involves forming drain contact area in P-type housing remote from P-type housing/N-type body housing junction |
摘要 |
<p>The method involves forming a P-type housing (23) juxtaposed with an N-type body housing (25) of an extended drain P-channel metal-oxide-semiconductor (MOS) transistor, where the P-type housing is formed during formation of P-type body housings of N-channel transistors. A drain contact area (37) is formed in the P-type housing remote from a junction between the P-type housing and the N-type body housing. An independent claim is also included for an extended drain P-channel MOS transistor.</p> |
申请公布号 |
FR2984596(A1) |
申请公布日期 |
2013.06.21 |
申请号 |
FR20110061807 |
申请日期 |
2011.12.16 |
申请人 |
STMICROELECTRONICS (CROLLES 2) SAS |
发明人 |
GOLANSKI DOMINIQUE;BIANCHI RAUL ANDRES |
分类号 |
H01L21/335;H01L21/02;H01L29/772 |
主分类号 |
H01L21/335 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|