| 摘要 |
<p>The invention relates to a polycrystalline silicon portion having at least one fracture surface or cut surface, which comprises metal contamination of from 0.07 ng/cm2 to 1 ng/cm2. The invention also relates to a method for breaking a silicon body, preferably a rod of polycrystalline silicon, comprising the steps: a) determining the lowest natural bending frequency of the silicon body; b) exciting the silicon body in its lowest natural bending frequency by means of an oscillation generator, the excitation being carried out at an excitation point of the silicon body such that the silicon body breaks at the excitation point; so that a silicon portion having a fracture surface results which comprises metal contamination of from 0.07 ng/cm2 to 1 ng/cm2.</p> |
