发明名称 |
METAL PURIFICATION METHOD, METAL, SILICON PURIFICATION METHOD, SILICON, CRYSTALLINE SILICON MATERIAL, AND SOLAR CELL |
摘要 |
<p>The problem addressed by the present invention is to refine a metal to a high purity in order to improve quality. This metal purification method is provided with: a melting step in which a metal containing impurities is melted; an immersion step in which a support (3) is immersed in the molten metal (1); and a precipitation step in which the support (3) immersed in the molten metal (1) to induce the solidification and segregation of the molten metal (1), and thereby precipitate purified metal (4) having few impurities onto the surface of the support (3). Further provided are: a drawing-up step in which the support (3) is drawn up out of the molten metal (1); and an elimination step in which liquid droplets (5) formed by the solidification of the molten metal (1) adhered to the outer surface of the purified metal (4) in the drawing-up step are eliminated.</p> |
申请公布号 |
WO2013088784(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
WO2012JP70668 |
申请日期 |
2012.08.14 |
申请人 |
SHARP KABUSHIKI KAISHA;OISHI, RYUICHI;NAGATA, YOSHIHIKO |
发明人 |
OISHI, RYUICHI;NAGATA, YOSHIHIKO |
分类号 |
C01B33/037;C22B9/02;H01L31/04 |
主分类号 |
C01B33/037 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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