| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a wiring structure, which is capable of increasing embedding properties of a wiring layer formed by electrolytic plating. <P>SOLUTION: The method for forming a wiring structure comprises a metal nitride film forming step of forming a WN film 43 on a semiconductor substrate 41 on which an insulating film 42 having a through hole 42a has been laminated, a tungsten silicide film forming step of laminating a WSi film 44 on the WN film 43, and a wiring forming step of forming a wiring layer 46 made of Cu by electrolytic plating, in the through hole 42a in which the WN film 43 and the WSi film 44 have been formed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
