| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure that protects a circuit from a surge current due to, for example, static electricity. <P>SOLUTION: A semiconductor device includes a semiconductor substrate of a first conductivity type, a first impurity diffusion region of a second conductivity type, a second impurity diffusion region of the first conductivity type, a third impurity diffusion region of the second conductivity type, a fourth impurity diffusion region of the second conductivity type, a first contact, and a first power supply. The first impurity diffusion region is provided in the semiconductor substrate, the second impurity diffusion region is provided in the first impurity diffusion region, and the third impurity diffusion region is provided in the second impurity diffusion region. A first portion of the fourth impurity diffusion region is provided in the second impurity diffusion region so as to be spaced apart from the third impurity diffusion region, and a second portion of the fourth impurity diffusion region is provided in a third portion of the first impurity diffusion region on a surface side of the semiconductor substrate. The first contact is provided so as to be in contact with the second portion, the first contact and the third portion are overlapped in a plan view, and the first power supply is connected to the third impurity diffusion region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
