SEMICONDUCTOR DEVICE AND POWER CONVERTING APPARATUS

摘要

This semiconductor device (IGBT with a built-in diode) has: an n--type drift layer (1); a p-type channel region (2) disposed in contact with the front surface side of the n--type drift layer (1); a gate electrode (5), which is provided in a trench (T) with a gate insulating film (3) therebetween, said trench penetrating the p-type channel region (2) and being provided to reach the n--type drift layer (1); an n-type source region (4), which is provided on the front surface side of the p-type channel region (2) such that the n-type source region is in contact with the trench (T); a high-concentration n-type region (6), which is disposed in contact with the rear surface side of the n--type drift layer (1); and a high-concentration p-type region (7), which is disposed in contact with the rear surface side of the high-concentration n-type region (6). Junction between the high-concentration n-type region (6) and the high-concentration p-type region (7) is tunnel junction. An IGBT and a diode can be configured of one chip using the semiconductor device. Furthermore, problems of "snap back" and "current crowding" can be eliminated.