发明名称 MEMORY DEVICE, METHOD OF PERFORMING READ OR WRITE OPERATION AND MEMORY SYSTEM INCLUDING THE SAME
摘要 PURPOSE: A read or write operation method of a memory cell, an apparatus, and a memory system including the same are provided to improve the speed of write and read operations by quickening data as much as the writing speed of DRAM in a write operation and opening a page as the DRAM in a read operation. CONSTITUTION: A first switch(100) transmits data and selects a memory column. A second switch(300) is directly connected to a memory cell for data transmission and memory column selection. A sensing and storage circuit(200) is located between the first switch and the second switch and amplifies and stores the data. The memory cell is composed of resistive memory cells.
申请公布号 KR20130066501(A) 申请公布日期 2013.06.20
申请号 KR20120118306 申请日期 2012.10.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, CHAN KYUNG;LEE, YUN SANG;PARK, CHUL WOO;HWANG, HONG SUN
分类号 G11C11/15;G11C7/10 主分类号 G11C11/15
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