发明名称 |
MEMORY DEVICE, METHOD OF PERFORMING READ OR WRITE OPERATION AND MEMORY SYSTEM INCLUDING THE SAME |
摘要 |
PURPOSE: A read or write operation method of a memory cell, an apparatus, and a memory system including the same are provided to improve the speed of write and read operations by quickening data as much as the writing speed of DRAM in a write operation and opening a page as the DRAM in a read operation. CONSTITUTION: A first switch(100) transmits data and selects a memory column. A second switch(300) is directly connected to a memory cell for data transmission and memory column selection. A sensing and storage circuit(200) is located between the first switch and the second switch and amplifies and stores the data. The memory cell is composed of resistive memory cells. |
申请公布号 |
KR20130066501(A) |
申请公布日期 |
2013.06.20 |
申请号 |
KR20120118306 |
申请日期 |
2012.10.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, CHAN KYUNG;LEE, YUN SANG;PARK, CHUL WOO;HWANG, HONG SUN |
分类号 |
G11C11/15;G11C7/10 |
主分类号 |
G11C11/15 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|