发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which is excellent in quality of a cutting part; which minimizes a region on a silicon substrate necessary for cutting; and which prevents immersion of a cutting fluid used in cutting by dicing into a semiconductor device. <P>SOLUTION: A semiconductor device manufacturing method comprises: a step of arranging a plurality of semiconductor device parts on a silicon substrate 10 such that the semiconductor device parts are adjacent to each other; bonding the silicon substrate 10 and a glass substrate 13 by using a resin 14; and cutting the silicon substrate 10 and the glass substrate 13, respectively, in a region where the resin 14 is provided. In the step of cutting the silicon substrate 10 and the glass substrate 13, respectively, includes: a step of half-cutting the silicon substrate 10 by dicing; a step of cutting the glass substrate 13 by scribing; and segmentalizing the silicon substrate 10, the glass substrate 13 and the resin 14. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013122984(A) 申请公布日期 2013.06.20
申请号 JP20110270895 申请日期 2011.12.12
申请人 CANON INC 发明人
分类号 H01L21/301;G02F1/13;G02F1/136;G09F9/00;G09F9/30;H01L51/50;H05B33/02;H05B33/04;H05B33/10 主分类号 H01L21/301
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