| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting element having an electrode with low contact resistance and high reflectance. <P>SOLUTION: A method of manufacturing a semiconductor light-emitting element includes: a step of forming an Ag film on a semiconductor stack portion including a light-emitting layer and a nitride semiconductor; a first heat treatment step of performing heat treatment to the Ag film in an atmosphere containing nitride; and a second heat treatment step of performing heat treatment to the Ag film in an atmosphere containing oxygen after the first heat treatment step. The temperature of the heat treatment of the first heat treatment step is higher than the temperature of the heat treatment of the second heat treatment step. <P>COPYRIGHT: (C)2013,JPO&INPIT |
