发明名称 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING THERMALLY ASSISTED SWITCHING
摘要 A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.
申请公布号 US2013154035(A1) 申请公布日期 2013.06.20
申请号 US201113332282 申请日期 2011.12.20
申请人 KROUNBI MOHAMAD TOWFIK;APALKOV DMYTRO;TANG XUETI;NIKITIN VLADIMIR;SAMSUNG ELECTRONICS CO., LTD. 发明人 KROUNBI MOHAMAD TOWFIK;APALKOV DMYTRO;TANG XUETI;NIKITIN VLADIMIR
分类号 H01L27/22;B05D5/12;G11B5/66;G11B5/673;G11B5/84 主分类号 H01L27/22
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