发明名称 |
LINER-FREE TUNGSTEN CONTACT |
摘要 |
An electrical structure comprises a dielectric layer present on a semiconductor substrate. A contact opening is present through the dielectric layer. A nickel-tungsten alloy silicide is formed over the semiconductor substrate within the contact opening. A tungsten-containing nucleation layer formed within the contact opening covers the nickel-tungsten alloy silicide and at least a portion of a sidewall of the contact opening. A tungsten contact is formed within the contact opening and separated from the nickel-tungsten alloy silicide and at least a portion of the sidewall by the tungsten-containing nucleation layer.
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申请公布号 |
US2013154098(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201313769402 |
申请日期 |
2013.02.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LAVOIE CHRISTIAN;OZCAN AHMET S.;PAPADATOS FILIPPOS |
分类号 |
H01L23/532 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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