发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. A light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the light-transmitting conductive layer, a semiconductor layer formed over the light-transmitting conductive layer which functions as the gate electrode with the gate insulating film interposed therebetween, and a light-transmitting conductive layer which is electrically connected to the semiconductor layer and functions as source and drain electrodes are included.
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申请公布号 |
US2013157393(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201313769893 |
申请日期 |
2013.02.19 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KIMURA HAJIME |
分类号 |
H01L33/02;G02F1/1368;H01L21/28;H01L21/3205;H01L21/336;H01L21/768;H01L23/522;H01L29/417;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
H01L33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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