发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. A light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the light-transmitting conductive layer, a semiconductor layer formed over the light-transmitting conductive layer which functions as the gate electrode with the gate insulating film interposed therebetween, and a light-transmitting conductive layer which is electrically connected to the semiconductor layer and functions as source and drain electrodes are included.
申请公布号 US2013157393(A1) 申请公布日期 2013.06.20
申请号 US201313769893 申请日期 2013.02.19
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KIMURA HAJIME
分类号 H01L33/02;G02F1/1368;H01L21/28;H01L21/3205;H01L21/336;H01L21/768;H01L23/522;H01L29/417;H01L29/423;H01L29/49;H01L29/786 主分类号 H01L33/02
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