发明名称 |
LOW THRESHOLD VOLTAGE CMOS DEVICE |
摘要 |
A semiconductor device including an NMOS region and a PMOS region; the NMOS region having a gate structure including a first high-k gate dielectric, a first work function setting metal and a gate electrode fill material; the PMOS region having a gate structure comprising a second high-k gate dielectric, a second work function setting metal and a gate electrode fill material; wherein the first gate dielectric is different than the second gate dielectric and the first work function setting metal is different than the second work function setting metal. Also disclosed are methods for fabricating the semiconductor device which include a gate last process. |
申请公布号 |
WO2013090638(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
WO2012US69593 |
申请日期 |
2012.12.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDO, TAKESHI;CHOI, CHANGHWAN;CHOI, KISIK;NARAYANAN, VIJAY |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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