| 摘要 |
FIELD: machine building.SUBSTANCE: method involves deposition of adsorbate vapours onto a substrate in vacuum and growth of a film from monolayers. At that, deposition of adsorbate vapours at minimum possible kinetic energy of their adsorbate atoms, as well as at thermal capacity of an atomic beam and at the substrate temperature, which provide absence of mixing of adsorbate atoms with substrate atoms and formation of island aggregates of adsorbate in the film. Periodic deposition of adsorbate vapours is performed by stopping at the moment of beginning of reduction of film temperature growth speed and by continuing when the substance surface temperature reaches its initial level. Density of adsorbate vapours is maintained at the same level simultaneously and throughout the section parallel to the substrate surface. Deposition is performed onto a substance surface having denser atomic packing and maximum energy density of surface electron states near Fermi level, as well as bigger number and/or an opposite sign of the charge carriers in relation to their number and/or sign in the substrate volume.EFFECT: preventing mixing of adsorbate atoms with substrate atoms and formation of island adsorbate aggregates in the film.2 cl, 17 dwg |
