| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor layer which is manufactured by application and sintering of nanoparticles without causing deterioration in throughput, which has a film thickness sufficient for absorbing sunlight, and which inhibits generation of cracks. <P>SOLUTION: The compound semiconductor layer includes a compound semiconductor part composed of a compound semiconductor material and an organic polymer part composed of an organic polymer material. It is preferable that the compound semiconductor part is composed of a plurality of crystal grains each composed of the compound semiconductor material. It is preferable that the organic polymer part is embedded between the neighboring crystal grains. It is preferable that a mass ratio of the organic polymer part to the compound semiconductor part is not less than 0.1 and not more than 0.3. <P>COPYRIGHT: (C)2013,JPO&INPIT |
