| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting element that prevents degradation of element characteristics due to the occurrence of cracks and introduction of defects and has high luminous efficiency. <P>SOLUTION: There is provided a semiconductor light-emitting element 110 including a first-conductivity-type first semiconductor layer 10, a second-conductivity-type second semiconductor layer 20, a light-emitting layer 30, and a first stress application layer 16. The first semiconductor layer contains a nitride semiconductor crystal and has tensile stress in the (0001) plane. The second semiconductor layer contains a nitride semiconductor crystal and has tensile stress in the (0001) plane. The light-emitting layer is provided between the first semiconductor layer and the second semiconductor layer and contains a nitride semiconductor crystal. The average lattice constant of the light-emitting layer is larger than the lattice constant of the first semiconductor layer. The first stress application layer is provided on the side of the first semiconductor layer opposite to the side on which the light-emitting layer is provided, and applies compressive stress to the first semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
