| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor device and a manufacturing method of the same, which prevent characteristics from deteriorating by minimizing the need for CMP treatment. <P>SOLUTION: A nonvolatile semiconductor storage device manufacturing method comprises: forming a gate insulation film 3, a first silicon film 4, an inter-electrode insulation film 5, a second silicon film 6, a silicide layer 7 and an insulation film for processing on a semiconductor substrate 2; sequentially etching the gate insulation film, the first silicon film, the inter-electrode insulation film, the second silicon film, the silicide layer and the insulation film for processing to form gate electrodes MG in an isolated manner; burying an inter-gate insulation film 8 between the gate electrodes MG; peeling the insulation film for processing to expose a top face of the second silicon film 6; processing a top face of the inter-gate insulation film 8 to make the top face have the same height as a height of a top face of the second silicon film 6; processing the second silicon film 6 to expose an upper part of the second silicon film 6 by etching the inter-gate insulation film 8 between gate electrodes SG to a predetermined depth with leaving a contact region of a predetermined width between the gate electrodes SG of neighboring two selection gate transistors; and silicide processing an upper part of the second silicon film 8 of the gate electrodes SG and forming an interlayer insulation film 9. <P>COPYRIGHT: (C)2013,JPO&INPIT |
