发明名称 PHOTODIODE, SEMICONDUCTOR PHOTODETECTOR, AND METHOD OF MANUFACTURING THEM
摘要 <P>PROBLEM TO BE SOLVED: To improve sensitivity of both blue-purple light and red light by one photodiode and to be able to maintain characteristics of other elements mounted together. <P>SOLUTION: A photodiode 1 includes: a first-conductivity-type substrate 2; a second-conductivity-type epitaxial layer 3 formed on the substrate 2; a first-conductivity-type buried layer 4 formed at the boundary between the substrate 2 and the epitaxial layer 3; a first-conductivity-type vertical diffusion layer 5 vertically formed from a surface of the epitaxial layer 3 to the buried layer 4; and a first-conductivity-type horizontal diffusion layer 6 horizontally formed from the vertical diffusion layer 5 inside the epitaxial layer 3. Regions having an original concentration of the epitaxial layer 3 remain at portions above and below the horizontal diffusion layer 6. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013122997(A) 申请公布日期 2013.06.20
申请号 JP20110271135 申请日期 2011.12.12
申请人 RENESAS ELECTRONICS CORP 发明人 MATSUBARA YUSUKE
分类号 H01L31/10 主分类号 H01L31/10
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