发明名称 |
RANDOM ACCESS MEMORY ARCHITECTURE FOR READING BIT STATES |
摘要 |
An architecture and method includes providing an oscillatory signal through each magnetic tunnel junction (MTJ), or in a line adjacent each MTJ, in a magnetoresistive random access memory array. A rectified signal appearing across each MTJ is measured and compared to a reference signal for determining the state of the MTJ.
|
申请公布号 |
US2013155762(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201213688390 |
申请日期 |
2012.11.29 |
申请人 |
EVERSPIN TECHNOLOGIES, INC.;EVERSPIN TECHNOLOGIES, INC. |
发明人 |
HOUSSAMEDDINE DIMITRI |
分类号 |
G11C11/16 |
主分类号 |
G11C11/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|