发明名称 SINGLE CRYSTAL SILICON TFTS MADE BY LATERAL CRYSTALLIZATION FROM A NANOWIRE SEED
摘要 A method can include depositing a thin metal film on a substrate of a sample, establishing a metal island on the substrate by patterning the thin metal film, and annealing the sample to de-wet the metal island and form a metal droplet from the metal island. The method can also include growing a nanowire on the substrate using the metal droplet as a catalyst, depositing a thin film of a semiconductor material on the sample, annealing the sample to allow for lateral crystallization to form a crystal grain, and patterning the crystal grain to establish a crystal island. An electronic device can be fabricated using the crystal island.
申请公布号 US2013157447(A1) 申请公布日期 2013.06.20
申请号 US201113330516 申请日期 2011.12.19
申请人 STREET ROBERT A.;RAYCHAUDHURI SOUROBH;PALO ALTO RESEARCH CENTER INCORPORATED 发明人 STREET ROBERT A.;RAYCHAUDHURI SOUROBH
分类号 H01L21/20 主分类号 H01L21/20
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