发明名称 |
3D NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A three-dimensional 3D nonvolatile memory device includes vertical channel layers protruding from a substrate; interlayer insulating layers and conductive layer patterns alternately deposited along the vertical channel layers; a barrier metal pattern surrounding each of the conductive layer patterns; a charge blocking layer interposed between the vertical channel layers and the barrier metal patterns; and a diffusion barrier layer interposed between the barrier metal patterns and the charge blocking layer.
|
申请公布号 |
US2013155771(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201213599956 |
申请日期 |
2012.08.30 |
申请人 |
KIM SUK GOO |
发明人 |
KIM SUK GOO |
分类号 |
H01L27/105;G11C16/04;H01L21/8239 |
主分类号 |
H01L27/105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|