| 摘要 |
FIELD: electrical engineering.SUBSTANCE: photovoltaic converter manufacturing method includes application of a substrate of n-GaSb dielectric mask onto the peripheral area, formation of a high-alloyed layer with p-type conductivity on the open sections of the substrate frontal surface by way of zinc diffusion from gas phase, removal from the frontal surface side by way of anodic oxidation with subsequent hydrochloric acid etching of part of the high-alloyed layer with p-type conductivity to an optimal depth determined by a calibration curve to ensure the preset occurrence depth of p-n-transitions, removal of the p-GaSb layer generated as a result of diffusion from the substrate, formation of the rear and the frontal ohmic contacts.EFFECT: invention will ensure increase of operational efficiency of the photovoltaic converter when used in different devices such as: solar cells and installations for light flux splitting at high magnification ratios of concentrated solar radiation as well as in systems for laser beam energy conversion and thermophotovoltaic power generators with high emitter temperature.2 cl, 4 ex, 10 dwg |
