发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a III-V semiconductor layer; an aluminum oxide layer formed on the III-V semiconductor layer; and a lanthanide oxide layer formed on the aluminum oxide layer. The method of manufacturing a semiconductor device includes: forming an aluminum oxide layer between a III-V semiconductor layer and a lanthanide oxide layer so as to prevent an inter-reaction of atoms between the III-V semiconductor layer and the lanthanide oxide layer.
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申请公布号 |
US2013153886(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201213477868 |
申请日期 |
2012.05.22 |
申请人 |
CHANG EDWARD YI.;LIN YUEH-CHIN;CHANG CHIA-HUA;TRINH HAI-DANG;NATIONAL CHIAO TUNG UNIVERSITY |
发明人 |
CHANG EDWARD YI.;LIN YUEH-CHIN;CHANG CHIA-HUA;TRINH HAI-DANG |
分类号 |
H01L29/12;H01L21/02 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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