发明名称 FORMING THROUGH SUBSTRATE VIAS
摘要 A method is provided for establishing through substrate vias (TSVs) within a substrate. The method includes: forming at least one recess in a front-side of a wafer; filling, at least partially, the at least one recess with a sacrificial material from the front-side of the wafer; thinning the wafer from a back-side to reveal the at least one recess at least partially filled with the sacrificial material; removing from the back-side of the wafer the sacrificial material from the at least one recess; and filling the at least one recess from the back-side of the wafer with a conductive material to provide the at least one through substrate via.
申请公布号 US2013157436(A1) 申请公布日期 2013.06.20
申请号 US201113325191 申请日期 2011.12.14
申请人 HUMMLER KLAUS;SEMATECH, INC. 发明人 HUMMLER KLAUS
分类号 H01L21/762;H01L21/768 主分类号 H01L21/762
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