发明名称 IMAGE SENSOR
摘要 An image sensor includes a plurality of unit pixels. Each unit pixel has a photo diode for sensing external light to generate photo charges. A transfer transistor is connected to the photo diode for storing the photo charges generated in the photo diode into a floating diffusion region when being turned-on. An amplification transistor amplifies the photo charges stored into the floating diffusion region. A select transistor, connected to the amplification transistor, performs a switching operation. An output line, extended in a column direction, outputs the photo charges in accordance with the switching operation of the select transistor. The photo diode may be formed in such a manner to share the output line with its adjacent photo diode in a horizontal direction, so that the photo charges generated in the photo diode and its adjacent photo diode are outputted through the output line.
申请公布号 US2013154046(A1) 申请公布日期 2013.06.20
申请号 US201213589858 申请日期 2012.08.20
申请人 PARK SO EUN;DONGBU HITEK CO., LTD. 发明人 PARK SO EUN
分类号 H01L27/146 主分类号 H01L27/146
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