发明名称 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
摘要 An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
申请公布号 US2013153877(A1) 申请公布日期 2013.06.20
申请号 US201313767250 申请日期 2013.02.14
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 EGUCHI SHINGO;OIKAWA YOSHIAKI;OKAZAKI KENICHI;MARUYAMA HOTAKA
分类号 H01L51/50 主分类号 H01L51/50
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