| 摘要 |
Disclosed herein is a semiconductor package, including: a first heat dissipation substrate; a first lead frame that is formed on the first heat dissipation substrate by patterning; a first semiconductor device formed on the first lead frame; a second semiconductor device that is stacked on the first semiconductor device; a second lead frame that is patterned and bonded to the second semiconductor device; and a second heat dissipation substrate formed on the first lead frame.
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