发明名称 PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND POLYMERIZABLE ESTER COMPOUND
摘要 A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer adapted to form a lactone ring under the action of an acid so that the polymer may reduce its solubility in an organic solvent developer, an acid generator, and an organic solvent displays a high dissolution contrast between the unexposed region of promoted dissolution and the exposed region of inhibited dissolution.
申请公布号 US2013157194(A1) 申请公布日期 2013.06.20
申请号 US201213707075 申请日期 2012.12.06
申请人 SHIN-ETSU CHEMICAL CO., LTD.;SHIN-ETSU CHEMICAL CO., LTD. 发明人 WATANABE TAKERU;KOBAYASHI TOMOHIRO;HATAKEYAMA JUN;KATAYAMA KAZUHIRO;KINSHO TAKESHI
分类号 G03F7/004 主分类号 G03F7/004
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