| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an air media layer of a semiconductor optical device, which has good uniformity. <P>SOLUTION: A manufacturing method of a semiconductor optical element 4 having an air media layer 442 comprises: forming on a substrate 40, a laminated film composed of a GaN (gallium nitride) thin film 42, a sacrificial layer 441 composed of ZnO (zinc oxide) and a semiconductor layer 46 including a nitride compound; and subsequently, removing a part of the sacrificial layer by immersing the substrate in an acid solution to form the semiconductor optical element 4 having the air media layer 442 formed by the remaining sacrificial layer 441 between the GaN (gallium nitride) thin film 42 and the semiconductor layer 46 including the nitride compound, and spaces around the remaining sacrificial layer 441. <P>COPYRIGHT: (C)2013,JPO&INPIT |
