发明名称 BUMP INCLUDING DIFFUSION BARRIER BI-LAYER AND MANUFACTURING METHOD THEREOF
摘要 Provided herein is a bump including a diffusion barrier bi-layer, the bump having: a conductive layer; a first diffusion barrier layer formed on or above the conductive layer, and comprising an alloy of nickel and phosphorus; a second diffusion barrier formed on or above the first diffusion barrier layer, and comprising copper; and a solder layer formed on or above the second diffusion barrier layer. A manufacturing method for producing a bump is also provided.
申请公布号 US2013154089(A1) 申请公布日期 2013.06.20
申请号 US201213715124 申请日期 2012.12.14
申请人 LEE HOOJEONG;LEE BYUNGHOON 发明人 LEE HOOJEONG;LEE BYUNGHOON
分类号 H01L23/498;H01L21/48 主分类号 H01L23/498
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