发明名称 MEMORY DEVICES HAVING BREAK CELLS
摘要 A representative memory device includes a cell array, at least one break cell that subdivides the cell array into bit cell arrays, and one or more power switches that are electrically coupled to the bit cell. In one embodiment, the break cell separates a connectivity of a first voltage and a second voltage between at least two bit cell arrays so that the bit cell arrays can be selectively coupled to either the first voltage or the second voltage using the power switches. The power switches control the connection of each separated bit cell array of the cell array to either the first voltage or second voltage.
申请公布号 US2013155751(A1) 申请公布日期 2013.06.20
申请号 US201313765704 申请日期 2013.02.13
申请人 CO., LTD. TAIWAN SEMICONDUCTOR MANUFACTURING;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 TANG YUKIT;HSU KUOYUAN;TAO DEREK
分类号 G11C5/02 主分类号 G11C5/02
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