| 摘要 |
PURPOSE: A semiconductor light emitting device is provided to suppress generation of crack by allowing a first stress applying layer and a second stress applying layer to apply a compressive stress to a first semiconductor crystal layer. CONSTITUTION: A first semiconductor layer(10) of first conduction type includes a nitride semiconductor crystal, and has tensile stress. A second semiconductor layer(20) of a second conduction type includes a nitride semiconductor crystal, and has tensile stress. A light emission layer(30) is installed between the first semiconductor layer and the second semiconductor layer. The light emission layer includes a nitride semiconductor crystal. Average lattice constant of the light emitting layer is larger than lattice constant of the first semiconductor layer. A first stress applying layer(16) is installed in the opposite side to the light emitting layer, and applies compressive stress to the first semiconductor layer.
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