发明名称 REPAIRABLE MULTI-LAYER MEMORY CHIP STACK AND METHOD THEREOF
摘要 A repairable multi-layer memory chip stack is provided. Each of the memory chips of the chip stack includes a control unit, a decoding unit, a memory array module and a redundant repair unit comprising at least one redundant repair element. The decoding unit receives a memory address from an address bus, and correspondingly outputs a decoded address. The memory array module determines whether to allow a data bus to access the data of the memory array module corresponding to a decoded address in accordance with an activation signal of the control unit. The redundant repair element includes a valid field, a chip ID field, a faulty address field and a redundant memory. When the valid field is valid, the value of the chip ID field matches the ID code, and the value of the faulty address field matches the decoded address, the redundant memory is coupled to the data bus.
申请公布号 US2013155794(A1) 申请公布日期 2013.06.20
申请号 US201213533977 申请日期 2012.06.27
申请人 WU MING-HSUEH;LUO KUN-LUN;CHEN CHEN-AN;CHEN YEE-WEN;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 WU MING-HSUEH;LUO KUN-LUN;CHEN CHEN-AN;CHEN YEE-WEN
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
主权项
地址