发明名称 3D NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A 3D non-volatile memory device includes a pipe gate, at least one first channel layer including a first pipe channel layer formed in the pipe gate and a pair of first source side channel layer and first drain side channel layer connected to the first pipe channel layer, and at least one second channel layer including a second pipe channel layer formed in the pipe gate and positioned over the first pipe channel layer and a pair of second source side channel layer and second drain side channel layer connected to the second pipe channel layer.
申请公布号 US2013153978(A1) 申请公布日期 2013.06.20
申请号 US201213598528 申请日期 2012.08.29
申请人 LEE KI HONG;PYI SEUNG HO;JEON SEOK MIN 发明人 LEE KI HONG;PYI SEUNG HO;JEON SEOK MIN
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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