发明名称 |
SELF-ALIGNED GATE STRUCTURE FOR FIELD EFFECT TRANSISTOR |
摘要 |
<p>A field effect transistor has a substrate with an epitaxial layer, base regions extending from a top of the epitaxial layer into the epitaxial layer, an insulation region having side walls and extending between two base regions on top of the substrate; and a polysilicon gate structure covering the insulation region including the side walls, wherein effective gates are formed by a portion of the polysilicon covering side walls above the base region.</p> |
申请公布号 |
WO2013090401(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
WO2012US69202 |
申请日期 |
2012.12.12 |
申请人 |
MICROCHIP TECHNOLOGY INCORPORATED |
发明人 |
DIX, GREGORY;KLINE, HAROLD;SCHROEDER, RODNEY;GRIMM, DANIEL, J. |
分类号 |
H01L29/78;H01L29/423;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|