| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering device configured to increase deposition speed and yield without damaging a surface of an object to be processed due to plasma. <P>SOLUTION: A distance between a target 12 and a magnet device 30, or a distance between the target 12 and a table 16 is adjusted so that the magnitude in a horizontal component of a magnetic field formed by the magnet device 30 falls within a range of 150-200 G on the surface of a target 12 and is equal to or less than 20 G on the surface of the table 16, to arrange the magnet device 30 on the back side of a target device 15. Plasma density on the surface of the target 12 is reduced. The plasma on the surface of the target 12, whose density has been reduced, reaches at a lower rate the surface of an object 48 to be processed, placed on the surface of the table 16, thereby reducing the plasma density to be formed on the surface of the object 48. <P>COPYRIGHT: (C)2013,JPO&INPIT |
