发明名称 |
Test Structures, Methods of Manufacturing Thereof, Test Methods, and MRAM Arrays |
摘要 |
Test structures, methods of manufacturing thereof, test methods, and magnetic random access memory (MRAM) arrays are disclosed. In one embodiment, a test structure is disclosed. The test structure includes an MRAM cell having a magnetic tunnel junction (MTJ) and a transistor coupled to the MTJ. The test structure includes a test node coupled between the MTJ and the transistor, and a contact pad coupled to the test node. |
申请公布号 |
US2013155759(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201113328953 |
申请日期 |
2011.12.16 |
申请人 |
KAO YA-CHEN;CHIANG TIEN-WEI;LIN CHUN-JUNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
KAO YA-CHEN;CHIANG TIEN-WEI;LIN CHUN-JUNG |
分类号 |
G11C11/14;G11C29/00;H01L23/58;H01L43/12 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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