| 摘要 |
A pixel electrode is formed on a TFT substrate, and a gate insulating film is formed thereon. On the gate insulating film, formed is an inorganic passivation film, on which a common electrode having slits is formed. Through-holes are formed in the gate insulating film at areas where the pixel electrode faces the common electrode, and the pixel electrode is not connected to a source electrode in the through-hole. The through-holes are filled with the inorganic passivation film, and the common electrode is formed on the inorganic passivation film at a position corresponding to each through-hole. The pixel electrode faces the common electrode at the position through not the gate insulating film but only the inorganic passivation film, and thus the pixel capacity can be increased. Accordingly, it is possible to prevent changes in the electric potential of the pixel electrode caused by ON/OFF operations.
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