| 发明名称 |
HYBRID CMOS NANOWIRE MESH DEVICE AND PDSOI DEVICE |
| 摘要 |
A method of forming a hybrid semiconductor structure on an SOI substrate. The method includes an integrated process flow to form a nanowire mesh device and a PDSOI device on the same SOI substrate. Also included is a semiconductor structure which includes the nanowire mesh device and the PDSOI device on the same SOI substrate.
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| 申请公布号 |
US2013153996(A1) |
申请公布日期 |
2013.06.20 |
| 申请号 |
US201113328069 |
申请日期 |
2011.12.16 |
| 申请人 |
CHANG JOSEPHINE B.;CHANG LELAND;LIN CHUNG-HSUN;SLEIGHT JEFFREY W.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG JOSEPHINE B.;CHANG LELAND;LIN CHUNG-HSUN;SLEIGHT JEFFREY W. |
| 分类号 |
H01L27/088;B82Y40/00;B82Y99/00;H01L21/28;H01L29/78 |
主分类号 |
H01L27/088 |
| 代理机构 |
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