发明名称 |
INDUCTORS WITH THROUGH VIAS |
摘要 |
A device using an inductor with one or more through vias, and a method of manufacture is provided. In an embodiment, an inductor is formed in one or more of the metallization layers. One or more through vias are positioned directly below the inductor. The through vias may extend through one or more dielectric layers interposed between a substrate and the inductors. Additionally, the through vias may extend completely or partially through the substrate.
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申请公布号 |
US2013154053(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201113330127 |
申请日期 |
2011.12.19 |
申请人 |
YEN HSIAO-TSUNG;LIN YU-LING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEN HSIAO-TSUNG;LIN YU-LING |
分类号 |
H01L27/08;H01L21/02 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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