POLYCRYSTALLINE ALUMINUM NITRIDE BASE MATERIAL FOR CRYSTAL GROWTH OF GaN-BASE SEMICONDUCTOR AND METHOD FOR MANUFACTURING GaN-BASE SEMICONDUCTOR USING THE SAME

摘要

There is provided a polycrystalline aluminum nitride base material having a linear expansion coefficient similar to GaN. The polycrystalline aluminum nitride base material as a substrate material for crystal growth of GaN-base semiconductors has a mean linear expansion coefficient of 4.9×10-6/K to 6.1×10-6/K between 20° C. and 600° C. and 5.5×10-6/K to 6.6×10-6/K between 20° C. and 1100° C.