发明名称 METHODS FOR SINGLE EXPOSURE - SELF-ALIGNED DOUBLE, TRIPLE, AND QUADRUPLE PATTERNING
摘要 <p>A method including forming a pattern on a surface of a substrate, the pattern including one of discrete structures including at least one sidewall defining an oblique angle relative to the surface and discrete structures complemented with a material layer therebetween, the material layer including a volume modified into distinct regions separated by at least one oblique angle relative to the surface; and defining circuit features on the substrate using the pattern, the features having a pitch less than a pitch of the pattern.</p>
申请公布号 WO2013089727(A1) 申请公布日期 2013.06.20
申请号 WO2011US65079 申请日期 2011.12.15
申请人 INTEL CORPORATION;CINNOR, FITIH, M.;WALLACE, CHARLES H. 发明人 CINNOR, FITIH, M.;WALLACE, CHARLES H.
分类号 H01L21/027 主分类号 H01L21/027
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