| 摘要 |
According to one embodiment, a semiconductor storage device includes a memory cell array, a data latch group. The memory cell array comprises a plurality of memory cells. The data latch group holds a first address or a second address of the memory cell and data. The data latch group comprises a first data latch unit and a second data latch unit, the first data latch unit holds write data to be written to any of the memory cells or read data read from the memory cell array and the first address or the second address, while the second data latch unit holds second write data or read data.
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